BSC110N06NS3 G MOSFET N-CH 60V 50A TDSON-8
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Datasheets | BSC110N06NS3 G |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2700pF @ 30V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | BSC110N06NS3 GDKR |
| PCN Other | Multiple Changes 09/Jul/2014 |
| Package / Case | 8-PowerTDFN |
| Packaging | Digi-Reel® |
| Power - Max | 50W |
| Product Photos | 8-PowerTDFN |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 50A, 10V |
| Series | OptiMOS™ |
| Standard Package | 1 |
| Supplier Device Package | PG-TDSON-8 (5.15x6.15) |
| Vgs(th) (Max) @ Id | 4V @ 23µA |
