BBY53-03WE6327
5.3 pF, 6 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

From Infineon Technologies AG

StatusACTIVE
Breakdown Voltage-Min6 V
China RoHS CompliantYes
ConfigurationSINGLE
Diode Capacitance Ratio-Min1.8
Diode Capacitance-Nom (Cd)5.3 pF
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
EU RoHS CompliantYes
Lead FreeYes
Number of Elements1
Number of Terminals2
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Variable Capacitance Diode ClassificationHYPERABRUPT

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