Datasheet.Directory

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"230A","Switching Energy":"5mJ (on), 3.3mJ (off)","Vce(on) (Max) @ Vge, Ic":"3.2V @ 15V, 82A","Td (on/off) @ 25\u00b0C":"30ns/210ns","Input Type":"Standard","Package / Case":"TO-264-3, TO-264AA","Gate Charge":"350nC","Product Photos":"TO-264","Voltage - Collector Emitter Breakdown (Max)":"1200V","Reverse Recovery Time (trr)":"-","Datasheets":"IXGx82N120B3","Standard Package":"25","Test Condition":"600V, 80A, 2 Ohm, 15V","IGBT Typ...

{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"THROUGH-HOLE","Turn-off Time-Nom (toff)":"760 ns","Collector Current-Max (IC)":"230 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"112 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1200 V","Channel Type":"N-CHANNEL","Transistor Application":"P...