{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"3.8 W","Avalanche Energy Rating (Eas)":"520 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"160 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Curr...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRL1404S\/L","Rds On (Max) @ Id, Vgs":"4 mOhm @ 95A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Sta...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"4 mOhm @ 95A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Other Names":"*IRL1404LPBF","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRL1404(S...