Product Datasheet Search Results:
12 Pages, 324 KB, Original- IRG4RC10KDPBF
- Infineon Technologies Ag
- Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK
12 Pages, 324 KB, Original- IRG4RC10KDTRPBF
- Infineon Technologies Ag
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11 Pages, 179 KB, Original- IRG4RC10KD
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12 Pages, 324 KB, Original- IRG4RC10KDPBF
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12 Pages, 324 KB, Original- IRG4RC10KDTRLPBF
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12 Pages, 324 KB, Original- IRG4RC10KDTRPBF
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12 Pages, 324 KB, Original- IRG4RC10KDTRRPBF
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Product Details Search Results:
Infineon.com/IRG4RC10KDPBF
{"Collector Current (DC) ":"9(A)","Operating Temperature (Min)":"-55C","Collector-Emitter Voltage":"600(V)","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"DPAK","Configuration":"Single","Pin Count":"2 +Tab"}...
1443 Bytes - 12:37:40, 22 November 2024
Infineon.com/IRG4RC10KDTRPBF
{"Collector Current (DC) ":"9(A)","Operating Temperature (Min)":"-55C","Collector-Emitter Voltage":"600(V)","Mounting":"Surface Mount","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"DPAK","Configuration":"Single","Pin Count":"2 +Tab"}...
1483 Bytes - 12:37:40, 22 November 2024
Irf.com/IRG4RC10KD
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"9A","Switching Energy":"250\u00b5J (on), 140\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.62V @ 15V, 5A","Td (on/off) @ 25\u00b0C":"49ns/97ns","Input Type":"Standard","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Gate Charge":"19nC","Product Photos":"TO-252-3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"28ns","Datasheets":"IRG4RC10KD","Standard Package":"75","Test Condition":"480...
1654 Bytes - 12:37:40, 22 November 2024
Irf.com/IRG4RC10KDPBF
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"9A","Switching Energy":"250\u00b5J (on), 140\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.62V @ 15V, 5A","Td (on/off) @ 25\u00b0C":"49ns/97ns","Input Type":"Standard","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Gate Charge":"19nC","Product Photos":"TO-252-3","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"28ns","Datasheets":"IRG4RC10KDPbF","Standard Package":"75","Test Condition":"...
1710 Bytes - 12:37:40, 22 November 2024
Irf.com/IRG4RC10KDTRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"410 ns","Collector Current-Max (IC)":"9 A","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"78 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Tra...
1453 Bytes - 12:37:40, 22 November 2024
Irf.com/IRG4RC10KDTRPBF
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"9A","Switching Energy":"250\u00b5J (on), 140\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.62V @ 15V, 5A","Td (on/off) @ 25\u00b0C":"49ns/97ns","Input Type":"Standard","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Gate Charge":"19nC","PCN Other":"Mold Compound/Alternate Fab Site 06/Feb/2014","Product Photos":"TO-252-3","PCN Assembly/Origin":"Alternate Diode Supplier 01/Apr/2014 Alternate Diode Supplier Retraction 04/Apr...
2216 Bytes - 12:37:40, 22 November 2024
Irf.com/IRG4RC10KDTRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"410 ns","Collector Current-Max (IC)":"9 A","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"78 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Tra...
1456 Bytes - 12:37:40, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRG4RC10KD.pdf | 0.19 | 1 | Request |
