{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"31A","Switching Energy":"630\u00b5J (on), 1.39mJ (off)","Vce(on) (Max) @ Vge, Ic":"1.8V @ 15V, 17A","Td (on\/off) @ 25\u00b0C":"42ns\/230ns","Input Type":"Standard","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"51nC","Product Photos":"TO-263","Voltage - Collector Emitter Breakdown (Max)":"600V","Reverse Recovery Time (trr)":"42ns","Datasheets":"IRG4BC30FD-S","Standard Package":"800","Test Cond...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"620 ns","Collector Current-Max (IC)":"31 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"69 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Transis...