Product Datasheet Search Results:

IRFN150.pdf7 Pages, 166 KB, Original
IRFN150
Infineon Technologies Ag
Trans MOSFET N-CH 100V 34A 3-Pin SMD-1
IRFN150.pdf7 Pages, 166 KB, Original
IRFN150
International Rectifier
34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150PBF.pdf7 Pages, 166 KB, Original
IRFN150PBF
International Rectifier
34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150.pdf1 Pages, 41 KB, Original
IRFN150
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
IRFN150.pdf2 Pages, 70 KB, Scan
IRFN150
Semelab Plc.
27 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150-JQR-B.pdf2 Pages, 70 KB, Scan
IRFN150-JQR-B
Semelab Plc.
27 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150-JQR-BR4.pdf2 Pages, 70 KB, Scan
IRFN150-JQR-BR4
Semelab Plc.
27 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150R4.pdf2 Pages, 70 KB, Scan
IRFN150R4
Semelab Plc.
27 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150SMD.pdf2 Pages, 22 KB, Original
IRFN150SMD
Semelab Plc.
27 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150SMD-JQR-B.pdf2 Pages, 22 KB, Original
IRFN150SMD-JQR-B
Semelab Plc.
27 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150SMD-JQR-BR4.pdf2 Pages, 22 KB, Original
IRFN150SMD-JQR-BR4
Semelab Plc.
27 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFN150SMDR4.pdf2 Pages, 22 KB, Original
IRFN150SMDR4
Semelab Plc.
27 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Infineon.com/IRFN150
1014 Bytes - 16:09:44, 29 November 2024
Irf.com/IRFN150
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1524 Bytes - 16:09:44, 29 November 2024
Irf.com/IRFN150PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"...
1590 Bytes - 16:09:44, 29 November 2024
Semelab.co.uk/IRFN150
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1500 Bytes - 16:09:44, 29 November 2024
Semelab.co.uk/IRFN150-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Br...
1537 Bytes - 16:09:44, 29 November 2024
Semelab.co.uk/IRFN150-JQR-BR4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICO...
1502 Bytes - 16:09:44, 29 November 2024
Semelab.co.uk/IRFN150R4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology"...
1546 Bytes - 16:09:44, 29 November 2024
Semelab.co.uk/IRFN150SMD
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1494 Bytes - 16:09:44, 29 November 2024
Semelab.co.uk/IRFN150SMD-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1532 Bytes - 16:09:44, 29 November 2024
Semelab.co.uk/IRFN150SMD-JQR-BR4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL...
1577 Bytes - 16:09:44, 29 November 2024
Semelab.co.uk/IRFN150SMDR4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL...
1541 Bytes - 16:09:44, 29 November 2024

Documentation and Support

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