Product Datasheet Search Results:
8 Pages, 309 KB, Scan- IRFM150
- Infineon Technologies Ag
- Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA
8 Pages, 309 KB, Scan- IRFM150
- International Rectifier
- 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
8 Pages, 309 KB, Scan- IRFM150D
- International Rectifier
- 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
8 Pages, 309 KB, Scan- IRFM150DPBF
- International Rectifier
- 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
8 Pages, 309 KB, Scan- IRFM150PBF
- International Rectifier
- 34 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
8 Pages, 309 KB, Scan- IRFM150U
- International Rectifier
- 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
8 Pages, 309 KB, Scan- IRFM150UPBF
- International Rectifier
- 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2 Pages, 74 KB, Scan- IRFM150
- Semelab Plc.
- 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
2 Pages, 74 KB, Scan- IRFM150-JQR-B
- Semelab Plc.
- 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
Product Details Search Results:
Infineon.com/IRFM150
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"150(W)","Continuous Drain Current":"34(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-254AA","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1433 Bytes - 16:13:14, 29 November 2024
Irf.com/IRFM150
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...
1414 Bytes - 16:13:14, 29 November 2024
Irf.com/IRFM150D
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1441 Bytes - 16:13:14, 29 November 2024
Irf.com/IRFM150DPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technolo...
1508 Bytes - 16:13:14, 29 November 2024
Irf.com/IRFM150PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.0700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEM...
1483 Bytes - 16:13:14, 29 November 2024
Irf.com/IRFM150U
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1439 Bytes - 16:13:14, 29 November 2024
Irf.com/IRFM150UPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technolo...
1507 Bytes - 16:13:14, 29 November 2024
Semelab.co.uk/IRFM150
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1419 Bytes - 16:13:14, 29 November 2024
Semelab.co.uk/IRFM150-JQR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1456 Bytes - 16:13:14, 29 November 2024
Semelab.co.uk/IRFM150-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technolog...
1515 Bytes - 16:13:14, 29 November 2024
Semelab.co.uk/IRFM150-QR-B
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vol...
1451 Bytes - 16:13:14, 29 November 2024
Semelab.co.uk/IRFM150-QR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"34 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0810 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"136 A","Channel Type":"N-CHANNEL","FET Technolog...
1507 Bytes - 16:13:14, 29 November 2024
