Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"25(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"3.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"PQFN EP","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"16 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0033 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Te...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package / Case":"8-PowerVDFN","Gate Charge (Qg) @ Vgs":"51nC @ 4.5V","Product Photos":"IRFH3707TR2PBF","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"3.3 mOhm @ 25A, 10V","Datasheets":"IRFH7932PBF","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"400","Drain to Source Voltage (Vd...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Package / Case":"8-PowerVDFN","Current - Continuous Drain (Id) @ 25\u00b0C":"24A (Ta), 104A (Tc)","Gate Charge (Qg) @ Vgs":"51nC @ 4.5V","Product Photos":"IRFH3707TR2PBF","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"3.3 mOhm @ 25A, 10V","D...