Product Datasheet Search Results:
1 Pages, 81 KB, Scan- IRFE110
- Motorola / Freescale Semiconductor
- N-Channel Enhancement Quad TMOS FET Transistors
7 Pages, 199 KB, Original- IRFE110
- International Rectifier
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
7 Pages, 199 KB, Original- IRFE110PBF
- International Rectifier
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
2 Pages, 25 KB, Original- IRFE110
- Semelab Plc.
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
2 Pages, 25 KB, Original- IRFE110E4
- Semelab Plc.
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
2 Pages, 25 KB, Original- IRFE110-JQR-B
- Semelab Plc.
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 71 KB, Scan- IRFE110-JQR-BE4
- Semelab Plc.
- 3.1 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
2 Pages, 25 KB, Original- IRFE110-QR-EB
- Semelab Plc.
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
2 Pages, 25 KB, Original- IRFE110-QR-JQR-B
- Semelab Plc.
- 3.5 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
1 Pages, 71 KB, Scan- IRFE110-QR-JQR-BE4
- Semelab Plc.
- 3.1 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/IRFE110
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"7 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUC...
1517 Bytes - 16:05:11, 29 November 2024
Irf.com/IRFE110PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"7 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-...
1584 Bytes - 16:05:11, 29 November 2024
Semelab.co.uk/IRFE110
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, LCC-18","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Avalanche Energy Rating (Eas)":"7 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor ...
1399 Bytes - 16:05:11, 29 November 2024
Semelab.co.uk/IRFE110E4
{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"7 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","EU RoHS Compliant":"Yes","Drain-source On Resistance-Max":"0.6900 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"14 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1446 Bytes - 16:05:11, 29 November 2024
Semelab.co.uk/IRFE110-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, LCC-18","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Avalanche Energy Rating (Eas)":"7 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor ...
1435 Bytes - 16:05:11, 29 November 2024
Semelab.co.uk/IRFE110-JQR-BE4
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC4-15","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL",...
1362 Bytes - 16:05:11, 29 November 2024
Semelab.co.uk/IRFE110-QR-EB
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, LCC-18","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Avalanche Energy Rating (Eas)":"7 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor ...
1435 Bytes - 16:05:11, 29 November 2024
Semelab.co.uk/IRFE110-QR-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, LCC-18","Pulsed Drain Current-Max (IDM)":"14 A","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Avalanche Energy Rating (Eas)":"7 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor ...
1451 Bytes - 16:05:11, 29 November 2024
Semelab.co.uk/IRFE110-QR-JQR-BE4
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"GOLD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"LCC4-15","Terminal Form":"NO LEAD","Operating Mode":"ENHANCEMENT","Package Style":"CHIP CARRIER","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.1 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"QUAD","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL",...
1380 Bytes - 16:05:11, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1FE1106-4.R.1-7.W..pdf | 1.22 | 1 | Request | |
| 1FE1104-4WN51-4BW2.pdf | 22.75 | 1 | Request | |
| 1FE1105-4.N.1-2.W..pdf | 1.22 | 1 | Request | |
| 1FE1105-4.Q.1-3W...pdf | 1.22 | 1 | Request | |
| 1FE1105-4.S.1-7.W..pdf | 1.22 | 1 | Request | |
| 1FE1103-4WN31-4BW2.pdf | 22.75 | 1 | Request | |
| 1FE1103-4.T.1-7.W..pdf | 1.22 | 1 | Request | |
| 1FE1105-4.Q.1-2.W..pdf | 1.22 | 1 | Request | |
| 1FE1103-4WT11-8NW3-ZV18.pdf | 1.22 | 1 | Request | |
| 1FE1104-4.L.1-7.W..pdf | 1.22 | 1 | Request | |
| 1FE1104-4WL51-4BW2.pdf | 22.75 | 1 | Request | |
| 1FE1103-4.N.1-1....pdf | 1.22 | 1 | Request |
