Product Datasheet Search Results:
8 Pages, 305 KB, Original- IRFB4110GPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube
9 Pages, 339 KB, Original- IRFB4110PBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube
8 Pages, 282 KB, Original- IRFB4110
- International Rectifier
- IRFB4110
8 Pages, 305 KB, Original- IRFB4110GPBF
- International Rectifier
- MOSFET N-CH 100V 120A TO220AB - IRFB4110GPBF
8 Pages, 238 KB, Original- IRFB4110PBF
- International Rectifier
- MOSFET N-CH 100V 120A TO-220AB - IRFB4110PBF
8 Pages, 305 KB, Original- IRFB4110QPBF
- International Rectifier
- Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB
Product Details Search Results:
Infineon.com/IRFB4110GPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"370(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1541 Bytes - 10:51:17, 29 November 2024
Infineon.com/IRFB4110PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"370(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1545 Bytes - 10:51:17, 29 November 2024
Irf.com/IRFB4110GPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"120A (Tc)","Gate Charge (Qg) @ Vgs":"210nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 Additional Assembly Site 13/Jun/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.5 mOhm @ 75A, 10V","Datasheets...
2006 Bytes - 10:51:17, 29 November 2024
Irf.com/IRFB4110PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"120A (Tc)","Gate Charge (Qg) @ Vgs":"210nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.5 mOhm @ 75A, 10V","Datashee...
2067 Bytes - 10:51:17, 29 November 2024
Irf.com/IRFB4110QPBF
942 Bytes - 10:51:17, 29 November 2024
