Product Datasheet Search Results:
11 Pages, 243 KB, Original- AUIRF9Z34N
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 55V 19A Automotive 3-Pin(3+Tab) TO-220AB Tube
11 Pages, 1105 KB, Original- IRF9Z34NLPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-262 Tube
9 Pages, 243 KB, Original- IRF9Z34NPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH 55V 19A 3-Pin(3+Tab) TO-220AB Tube
11 Pages, 132 KB, Original- IRF9Z34NS
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 1105 KB, Original- IRF9Z34NSPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK Tube
11 Pages, 132 KB, Original- IRF9Z34NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 1105 KB, Original- IRF9Z34NSTRRPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R
12 Pages, 261 KB, Original- AUIRF9Z34N
- International Rectifier
- MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
9 Pages, 110 KB, Original- IRF9Z34N
- International Rectifier
- IRF9Z34N
1 Pages, 28 KB, Scan- IRF9Z34N-002PBF
- International Rectifier
- 17 A, 55 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 28 KB, Scan- IRF9Z34N-003PBF
- International Rectifier
- 17 A, 55 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
1 Pages, 28 KB, Scan- IRF9Z34N-004PBF
- International Rectifier
- 17 A, 55 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Infineon.com/AUIRF9Z34N
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"19(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"68(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1551 Bytes - 10:34:38, 29 November 2024
Infineon.com/IRF9Z34NLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"19(A)","Mounting":"Through Hole","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Rad Hardened":"No","Package Type":"TO-262","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1518 Bytes - 10:34:38, 29 November 2024
Infineon.com/IRF9Z34NPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"19(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"68(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1525 Bytes - 10:34:38, 29 November 2024
Infineon.com/IRF9Z34NS
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"19(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1499 Bytes - 10:34:38, 29 November 2024
Infineon.com/IRF9Z34NSPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"19(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1511 Bytes - 10:34:38, 29 November 2024
Infineon.com/IRF9Z34NSTRLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"19(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1523 Bytes - 10:34:38, 29 November 2024
Infineon.com/IRF9Z34NSTRRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"19(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1526 Bytes - 10:34:38, 29 November 2024
Irf.com/AUIRF9Z34N
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"19 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"68 A","Channel Type":"P-CH...
1577 Bytes - 10:34:38, 29 November 2024
Irf.com/IRF9Z34N-002PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Transistor App...
1449 Bytes - 10:34:38, 29 November 2024
Irf.com/IRF9Z34N-003PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Transistor App...
1449 Bytes - 10:34:38, 29 November 2024
Irf.com/IRF9Z34N-004PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Transistor App...
1447 Bytes - 10:34:38, 29 November 2024
Irf.com/IRF9Z34N-005PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Transistor App...
1446 Bytes - 10:34:38, 29 November 2024
