Product Datasheet Search Results:
9 Pages, 506 KB, Original- IRF9Z24NPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 55V 12A 3-Pin(3+Tab) TO-220AB Tube
11 Pages, 391 KB, Original- IRF9Z24NSPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK Tube
11 Pages, 391 KB, Original- IRF9Z24NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH 55V 12A 3-Pin(2+Tab) D2PAK T/R
9 Pages, 111 KB, Original- IRF9Z24N
- International Rectifier
- IRF9Z24N
5 Pages, 264 KB, Scan- IRF9Z24N-002
- International Rectifier
- 12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
5 Pages, 264 KB, Scan- IRF9Z24N-002PBF
- International Rectifier
- 12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
5 Pages, 264 KB, Scan- IRF9Z24N-003
- International Rectifier
- 12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
5 Pages, 264 KB, Scan- IRF9Z24N-003PBF
- International Rectifier
- 12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
5 Pages, 264 KB, Scan- IRF9Z24N-004
- International Rectifier
- 12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
5 Pages, 264 KB, Scan- IRF9Z24N-004PBF
- International Rectifier
- 12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
5 Pages, 264 KB, Scan- IRF9Z24N-005
- International Rectifier
- 12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
5 Pages, 264 KB, Scan- IRF9Z24N-005PBF
- International Rectifier
- 12 A, 55 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/IRF9Z24NPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"45(W)","Continuous Drain Current":"12(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1546 Bytes - 10:49:02, 29 November 2024
Infineon.com/IRF9Z24NSPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"3.8(W)","Continuous Drain Current":"12(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1506 Bytes - 10:49:02, 29 November 2024
Infineon.com/IRF9Z24NSTRLPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"3.8(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1523 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-002
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1473 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-002PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHA...
1542 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-003
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1473 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-003PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHA...
1540 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-004
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1473 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-004PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHA...
1540 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-005
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1473 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-005PBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHA...
1540 Bytes - 10:49:02, 29 November 2024
Irf.com/IRF9Z24N-006
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1750 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"48 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1471 Bytes - 10:49:02, 29 November 2024
