Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"8.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"8.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.9V @ 100\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","For Use With":"IRAC1166-100W-ND - BOARD DEMO 100W FOR IR1166","Gate Charge (Qg) @ Vgs":"39nC @ 10V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 SO8 FET Assembly Site Addition 17/Apr/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"18 m...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.9V @ 100\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","For Use With":"IRAC1166-100W-ND - BOARD DEMO 100W FOR IR1166","Gate Charge (Qg) @ Vgs":"39nC @ 10V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013 SO8 FET Assembly Site Addition 17/Apr/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"18 m...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Rise Time":"6.6 ns","Typical Turn-Off Delay Time":"26 ns","Description":"Value","Maximum Continuous Drain Current":"8.3 A","Package":"8SOIC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"13 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"18@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"6 ns"}...