Product Datasheet Search Results:
- IRF7807D1
- International Rectifier
- IRF7807D1
- IRF7807D1PBF
- International Rectifier
- MOSFET N-CH 30V 8.3A 8-SOIC - IRF7807D1PBF
- IRF7807D1-TR
- International Rectifier
- 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
- IRF7807D1TR
- International Rectifier
- MOSFET N-CH 30V 8.3A 8-SOIC - IRF7807D1TR
- IRF7807D1-TRPBF
- International Rectifier
- 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
- IRF7807D1TRPBF
- International Rectifier
- MOSFET N-CH 30V 8.3A 8-SOIC - IRF7807D1TRPBF
Product Details Search Results:
Irf.com/IRF7807D1
936 Bytes - 08:55:17, 29 November 2024
Irf.com/IRF7807D1PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Diode (Isolated)","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"8.3A (Ta)","Gate Charge (Qg) @ Vgs":"17nC @ 5V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"25 mOhm @ 7A, 4.5V","Datasheets":"IRF7807D1PbF","FET Type":"MOSFET N-Channel, ...
1813 Bytes - 08:55:17, 29 November 2024
Irf.com/IRF7807D1-TR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"66 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...
1506 Bytes - 08:55:17, 29 November 2024
Irf.com/IRF7807D1TR
{"Category":"Discrete Semiconductor Products","FET Feature":"Diode (Isolated)","Product Photos":"8-SOIC","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"FETKY\u2122","Standard Package":"4,000","Supplier Device Package":"8-SO","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF7807D1","Rds On (Max) @ Id, Vgs":"25 mOhm @ 7A, 4.5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"8-SOIC (0....
1651 Bytes - 08:55:17, 29 November 2024
Irf.com/IRF7807D1-TRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"66 A","Channel Type":"N-CHANN...
1575 Bytes - 08:55:17, 29 November 2024
Irf.com/IRF7807D1TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Diode (Isolated)","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"8.3A (Ta)","Gate Charge (Qg) @ Vgs":"17nC @ 5V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"25 mOhm @ 7A, 4.5V","Datasheets":"IRF7807D1PbF","FET Type":"MOSFET N-Channel, ...
1953 Bytes - 08:55:17, 29 November 2024
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