Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 150C","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Rad Hardened":"No","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"26 mOhm @ 4.2A, 10V","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"AUIRF7478Q","Power - Max"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"4,000","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7478Q","Rds On (Max) @ Id, Vgs":"26 mOhm @ 4.2A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","PC...

{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Rad Hardened":"No","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"60 V","Frequency (Max)":"Not Required MHz","Drain-Source On-Res":"0.026 ohm","Power Dissipation":"2.5 W","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Output Power (Max)":"Not Required W","Pin Count":"8","Continuous Drain Current":"7 A","Power Gain ":"Not R...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"7A (Ta)","Gate Charge (Qg) @ Vgs":"31nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Alternate Assembly Site 15/Apr/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"26 mOhm @ 4.2A, 10V","Datasheets":"IRF7478PbF","FET Type":"MOSF...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0260 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Ma...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"7A (Ta)","Gate Charge (Qg) @ Vgs":"31nC @ 4.5V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"26 mOhm @ 4.2A, 10V","Datasheets":"IRF7478QPbF","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"7A (Ta)","Gate Charge (Qg) @ Vgs":"31nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Alternate Assembly Site 15/Apr/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"26 mOhm @ 4.2A, 10V","Datasheets":"IRF7478PbF","FET Type":"MOSF...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"2.6 ns","Typical Turn-Off Delay Time":"44 ns","Description":"Value","Maximum Continuous Drain Current":"7 A","Package":"8SOIC","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"7.7 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"26@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"13 ns"}...