Product Datasheet Search Results:
11 Pages, 316 KB, Original- AUIRF7343QTR
- Infineon Technologies Americas Corp.
- MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
10 Pages, 221 KB, Original- IRF7343PBF
- Infineon Technologies Ag
- Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC N Tube
10 Pages, 182 KB, Original- IRF7343TRPBF
- Infineon Technologies Ag
- Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC N T/R
13 Pages, 223 KB, Original- AUIRF7343Q
- International Rectifier
- MOSFET N/P-CH 55V 4.7/3.4A 8SOIC - AUIRF7343Q
13 Pages, 223 KB, Original- AUIRF7343QTR
- International Rectifier
- MOSFET N/P-CH 55V 4.7/3.4A 8SOIC - AUIRF7343QTR
10 Pages, 188 KB, Original- IRF7343
- International Rectifier
- IRF7343
10 Pages, 213 KB, Original- IRF7343IPBF
- International Rectifier
- 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
10 Pages, 99 KB, Original- IRF7343(N)
- International Rectifier
- 55V Single N-Channel HEXFET Power MOSFET in a SO-8 package
10 Pages, 99 KB, Original- IRF7343(P)
- International Rectifier
- 55V Single P-Channel HEXFET Power MOSFET in a SO-8 package
10 Pages, 221 KB, Original- IRF7343PBF
- International Rectifier
- MOSFET N+P 55V 3.4A 8-SOIC - IRF7343PBF
10 Pages, 226 KB, Original- IRF7343Q
- International Rectifier
- IRF7343Q
10 Pages, 224 KB, Original- IRF7343QPBF
- International Rectifier
- 4.7 A, 55 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
Product Details Search Results:
Infineon.com/AUIRF7343QTR
993 Bytes - 06:34:30, 29 November 2024
Infineon.com/IRF7343PBF
{"Polarity":"N/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2(W)","Continuous Drain Current":"4.7/3.4(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1515 Bytes - 06:34:30, 29 November 2024
Infineon.com/IRF7343TRPBF
{"Polarity":"N/P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.7/3.4(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1505 Bytes - 06:34:30, 29 November 2024
Irf.com/AUIRF7343Q
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"50 mOhm @ 4.7A, 10V","FET Feature":"Logic Level Gate","Family":"FETs - Arrays","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"95","Supplier Device Package":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Packaging":"Tube","FET Type":"N and P-Channel","Datasheets":"AUIRF7343Q","Power - Max":"2W","Package / Case":"8-SOIC (0.154\", 3.9...
1705 Bytes - 06:34:30, 29 November 2024
Irf.com/AUIRF7343QTR
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Family":"FETs - Arrays","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7343Q","Rds On (Max) @ Id, Vgs":"50 mOhm @ 4.7A, 10V","FET Type":"N and P-Channel","Packaging":"Tape & Reel (TR)","Power - Max":"2W",...
1736 Bytes - 06:34:30, 29 November 2024
Irf.com/IRF7343
{"Polarity":"N/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.7/3.4(A)","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"55(V)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Output Power (Max)":"Not Required W","Rad Hardened":"N...
1653 Bytes - 06:34:30, 29 November 2024
Irf.com/IRF7343IPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"72 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"38 A","Channel ...
1595 Bytes - 06:34:30, 29 November 2024
Irf.com/IRF7343PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"4.7A, 3.4A","Gate Charge (Qg) @ Vgs":"36nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"50 mOhm @ 4.7A, 10V","Datasheets":"IRF7343PbF","FET Type":"N and P-Channel","PCN Packaging":"Package Drawing Update 19/Au...
1937 Bytes - 06:34:30, 29 November 2024
Irf.com/IRF7343QPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"72 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"38 A","Channel ...
1605 Bytes - 06:34:30, 29 November 2024
Irf.com/IRF7343QTRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"8-SOIC","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"740pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"1","Supplier Device Package":"8-SO","Datasheets":"IRF7343QPBF","Rds On (Max) @ Id, Vgs":"50 mOhm @ 4.7A, 10V","FET Type":"N and P-Channel","Packaging":"Digi-Reel\u00ae","Power - Max":"2W","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Mounting Type":"Surfa...
1621 Bytes - 06:34:30, 29 November 2024
Irf.com/IRF7343TR
{"Polarity":"N/P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.7/3.4 A","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"55 V","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Packaging":"Tape and Reel","Power Dissipation":"2 W","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Output Power (Max)":"Not Required W","Rad Hardened":"No","Typ...
1657 Bytes - 06:34:30, 29 November 2024
Irf.com/IRF7343TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"4.7A, 3.4A","Gate Charge (Qg) @ Vgs":"36nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"50 mOhm @ 4.7A, 10V","Datasheets":"IRF7343PbF","FET Type":"N and P-Channel","PCN Packaging":"Package Drawing Update 19/Au...
1946 Bytes - 06:34:30, 29 November 2024
