Product Datasheet Search Results:
8 Pages, 249 KB, Original- AUIRF7316QTR
- Infineon Technologies Americas Corp.
- MOSFET 2P-CH 30V 4.9A 8SOIC
7 Pages, 205 KB, Original- IRF7316PBF
- Infineon Technologies Americas Corp.
- MOSFET 2P-CH 30V 4.9A 8-SOIC
7 Pages, 240 KB, Original- IRF7316TRPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC N T/R
8 Pages, 249 KB, Original- AUIRF7316Q
- International Rectifier
- MOSFET 2P-CH 30V 4.9A 8SOIC
9 Pages, 241 KB, Original- AUIRF7316QTR
- International Rectifier
- MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon
7 Pages, 240 KB, Original- IRF7316
- International Rectifier
- IRF7316
7 Pages, 228 KB, Original- IRF7316GPBF
- International Rectifier
- 4.9 A, 30 V, 0.058 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
7 Pages, 228 KB, Original- IRF7316GTRPBF
- International Rectifier
- MOSFET P-CH DUAL 30V 4.9A 8-SOIC - IRF7316GTRPBF
7 Pages, 205 KB, Original- IRF7316PBF
- International Rectifier
- MOSFET 2P-CH 30V 4.9A 8-SOIC - IRF7316PBF
7 Pages, 218 KB, Original- IRF7316QPBF
- International Rectifier
- 4.9 A, 30 V, 0.058 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
Product Details Search Results:
Infineon.com/AUIRF7316QTR
986 Bytes - 17:24:19, 01 December 2024
Infineon.com/IRF7316GTRPBF
1058 Bytes - 17:24:19, 01 December 2024
Infineon.com/IRF7316PBF
971 Bytes - 17:24:19, 01 December 2024
Infineon.com/IRF7316TR
972 Bytes - 17:24:19, 01 December 2024
Infineon.com/IRF7316TRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.9(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC N","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1496 Bytes - 17:24:19, 01 December 2024
Irf.com/AUIRF7316Q
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"58 mOhm @ 4.9A, 10V","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Packaging":"Tube","FET Type":"2 P-Channel (Dual)","Datasheets":"AUIRF7316Q","Power - Max":"2W","Stan...
1573 Bytes - 17:24:19, 01 December 2024
Irf.com/AUIRF7316QTR
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Family":"FETs - Arrays","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7316Q","Rds On (Max) @ Id, Vgs":"58 mOhm @ 4.9A, 10V","FET Type":"2 P-Channel (Dual)","Packaging":"Tape & Reel (TR)","Power - Max":"2W"...
1721 Bytes - 17:24:19, 01 December 2024
Irf.com/IRF7316
{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Turn-Off Delay Time":"34 ns","Description":"Value","Maximum Continuous Drain Current":"4.9 A","Package":"8SOIC","Typical Turn-On Delay Time":"13 ns","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Channel Type":"P","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"58@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"32 ns"}...
1387 Bytes - 17:24:19, 01 December 2024
Irf.com/IRF7316GPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.9 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0580 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"...
1591 Bytes - 17:24:19, 01 December 2024
Irf.com/IRF7316GTRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"4.9A","Gate Charge (Qg) @ Vgs":"34nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"58 mOhm @ 4.9A, 10V","Datasheets":"IRF7316GPBF","FET Type":"2 P-Channel (Dual)","Standard Package":"4,000","Drain to So...
1771 Bytes - 17:24:19, 01 December 2024
Irf.com/IRF7316PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"4.9A","Gate Charge (Qg) @ Vgs":"34nC @ 10V","Product Photos":"8-SOIC","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"58 mOhm @ 4.9A, 10V","Datasheets":"IRF7316PbF","FET Type":"2 P-Channel (Dual)","PCN Packaging":"Package Drawing Update ...
1764 Bytes - 17:24:19, 01 December 2024
Irf.com/IRF7316QPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"140 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.9 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0580 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel...
1587 Bytes - 17:24:19, 01 December 2024
