Product Datasheet Search Results:

AUIRF7309QTR.pdf12 Pages, 449 KB, Original
IRF7309HR.pdf11 Pages, 2082 KB, Original
IRF7309HR
Infineon Technologies Ag
Trans MOSFET N/P-CH 30V 4A/3A T/R
IRF7309PBF.pdf11 Pages, 2062 KB, Original
IRF7309TRPBF.pdf11 Pages, 2082 KB, Original
IRF7309TRPBF
Infineon Technologies Ag
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
IRF7309TRPBF..pdf11 Pages, 2082 KB, Original
IRF7309TRPBF.
Infineon Technologies Ag
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
AUIRF7309Q.pdf12 Pages, 449 KB, Original
AUIRF7309Q
International Rectifier
MOSFET N/P-CH 30V 4A/3A 8SOIC
AUIRF7309QTR.pdf13 Pages, 442 KB, Original
AUIRF7309QTR
International Rectifier
MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms
IRF7309.pdf11 Pages, 2088 KB, Original
IRF7309HR.pdf11 Pages, 2082 KB, Original
IRF7309HR
International Rectifier
Trans MOSFET N/P-CH 30V 4A/3A T/R
IRF7309I.pdf11 Pages, 812 KB, Original
IRF7309I
International Rectifier
4 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
IRF7309IPBF.pdf11 Pages, 1798 KB, Original
IRF7309PBF.pdf11 Pages, 1173 KB, Original
IRF7309PBF
International Rectifier
MOSFET N+P 30V 3A 8-SOIC - IRF7309PBF

Product Details Search Results:

Infineon.com/AUIRF7309QTR
990 Bytes - 04:40:34, 29 November 2024
Infineon.com/IRF7309HR
{"Polarity":"N/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1.4(W)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1440 Bytes - 04:40:34, 29 November 2024
Infineon.com/IRF7309PBF
974 Bytes - 04:40:34, 29 November 2024
Infineon.com/IRF7309TRPBF
{"Polarity":"N/P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"1.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1462 Bytes - 04:40:34, 29 November 2024
Infineon.com/IRF7309TRPBF.
{"Polarity":"N/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1.4(W)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1467 Bytes - 04:40:34, 29 November 2024
Irf.com/AUIRF7309Q
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.4A, 10V","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Packaging":"Tube","FET Type":"N and P-Channel","Datasheets":"AUIRF7309Q","Power - Max":"1.4W","Stand...
1583 Bytes - 04:40:34, 29 November 2024
Irf.com/AUIRF7309QTR
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Family":"FETs - Arrays","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7309Q","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.4A, 10V","FET Type":"N and P-Channel","Packaging":"Tape & Reel (TR)","Power - Max":"1.4W",...
1730 Bytes - 04:40:34, 29 November 2024
Irf.com/IRF7309
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.4 W","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"MET...
1513 Bytes - 04:40:34, 29 November 2024
Irf.com/IRF7309HR
{"Polarity":"N/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Power Dissipation":"1.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1437 Bytes - 04:40:34, 29 November 2024
Irf.com/IRF7309I
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1477 Bytes - 04:40:34, 29 November 2024
Irf.com/IRF7309PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"1V @ 250\u00b5A","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"4A, 3A","Gate Charge (Qg) @ Vgs":"25nC @ 4.5V","Product Photos":"8-SOIC","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"50 mOhm @ 2.4A, 10V","Datasheets":"IRF7309PbF","FET Type":"N and P-Ch...
1747 Bytes - 04:40:34, 29 November 2024
Irf.com/IRF7309QPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"16 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Techn...
1561 Bytes - 04:40:34, 29 November 2024

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