Product Datasheet Search Results:

AUIRF7103Q.pdf13 Pages, 226 KB, Original
AUIRF7103Q
Infineon Technologies Ag
Trans MOSFET N-CH Si 50V 3A Automotive 8-Pin SOIC T/R
AUIRF7103QTR.pdf11 Pages, 432 KB, Original
IRF7103.pdf9 Pages, 160 KB, Original
IRF7103
Infineon Technologies Ag
Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC T/R
IRF7103PBF.pdf9 Pages, 307 KB, Original
IRF7103PBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC Tube
IRF7103QHR.pdf10 Pages, 261 KB, Original
IRF7103QHR
Infineon Technologies Ag
Trans MOSFET N-CH Si 50V 3A Automotive 8-Pin SOIC
IRF7103TR.pdf9 Pages, 160 KB, Original
IRF7103TR
Infineon Technologies Ag
Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC T/R
IRF7103TRPBF.pdf9 Pages, 160 KB, Original
IRF7103TRPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 50V 3A 8-Pin SOIC T/R
AUIRF7103Q.pdf11 Pages, 432 KB, Original
AUIRF7103QTR.pdf12 Pages, 425 KB, Original
AUIRF7103QTR
International Rectifier
MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms
IRF7103.pdf9 Pages, 164 KB, Original
IRF7103IPBF.pdf9 Pages, 266 KB, Original
IRF7103IPBF
International Rectifier
3 A, 50 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Infineon.com/AUIRF7103Q
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.4(W)","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1500 Bytes - 05:41:25, 29 November 2024
Infineon.com/AUIRF7103QTR
983 Bytes - 05:41:25, 29 November 2024
Infineon.com/IRF7103
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1441 Bytes - 05:41:25, 29 November 2024
Infineon.com/IRF7103PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Rail/Tube","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1479 Bytes - 05:41:25, 29 November 2024
Infineon.com/IRF7103Q
965 Bytes - 05:41:25, 29 November 2024
Infineon.com/IRF7103QHR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Power Dissipation":"2.4(W)","Operating Temp Range":"-55C to 175C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1460 Bytes - 05:41:25, 29 November 2024
Infineon.com/IRF7103TR
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1449 Bytes - 05:41:25, 29 November 2024
Infineon.com/IRF7103TRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2(W)","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"50(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOIC","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...
1459 Bytes - 05:41:25, 29 November 2024
Irf.com/AUIRF7103Q
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"130 mOhm @ 3A, 10V","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Arrays","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Packaging":"Tube","FET Type":"2 N-Channel (Dual)","Datasheets":"AUIRF7103Q","Power - Max":"2.4W","Standard Pa...
1566 Bytes - 05:41:25, 29 November 2024
Irf.com/AUIRF7103QTR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Arrays","Product Photos":"8-SOIC","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"8-SOIC (0.154\", 3.90mm Width)","Supplier Device Package":"8-SO","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF7103Q","Rds On (Max) @ Id, Vgs":"130 mOhm @ 3A, 10V","FET Type":"2 N-Channel (Dual)","Packaging":"Tape & Reel (TR)","Power - Max":"2.4W","Stand...
1713 Bytes - 05:41:25, 29 November 2024
Irf.com/IRF7103
{"Polarity":"N","Continuous Drain Current":"3 A","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Product Category":"MOSFET","Gate-Source Voltage (Max)":"\ufffd20 V","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"SOIC","Drain-Source On-Res":"0.13 ohm","Manufacturer":"INTERNATIONAL RECTIFIER","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":...
1554 Bytes - 05:41:25, 29 November 2024
Irf.com/IRF7103IPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-...
1537 Bytes - 05:41:25, 29 November 2024

Documentation and Support

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