Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"37 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0029 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Tec...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Catalog Drawings":"IR Hexfet Circuit","Package / Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"45nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.9 mOhm @ 25A, 10V","Product Photos":"IRF6794MTR1PBF","PCN Assembly/Origin":"DirectFET Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","P...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.35V @ 100\u00b5A","Catalog Drawings":"IR Hexfet Circuit","Package / Case":"DirectFET\u2122 Isometric MX","Gate Charge (Qg) @ Vgs":"45nC @ 4.5V","Rds On (Max) @ Id, Vgs":"2.9 mOhm @ 25A, 10V","Product Photos":"IRF6794MTR1PBF","PCN Assembly/Origin":"DirectFET Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","P...