Product Datasheet Search Results:

AUIRF3808.pdf12 Pages, 222 KB, Original
AUIRF3808
Infineon Technologies Ag
Trans MOSFET N-CH Si 75V 140A Automotive 3-Pin(3+Tab) TO-220AB Tube
AUIRF3808S.pdf11 Pages, 671 KB, Original
AUIRF3808S
Infineon Technologies Ag
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK Tube
AUIRF3808STRL.pdf11 Pages, 671 KB, Original
AUIRF3808STRL
Infineon Technologies Ag
Trans MOSFET N-CH Si 75V 106A Automotive 3-Pin(2+Tab) D2PAK T/R
IRF3808PBF.pdf9 Pages, 248 KB, Original
IRF3808PBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 75V 140A 3-Pin(3+Tab) TO-220AB Tube
IRF3808SPBF.pdf12 Pages, 260 KB, Original
IRF3808SPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK Tube
IRF3808STRLPBF.pdf12 Pages, 260 KB, Original
IRF3808STRLPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
IRF3808STRRPBF.pdf12 Pages, 260 KB, Original
IRF3808STRRPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
AUIRF3808.pdf13 Pages, 236 KB, Original
AUIRF3808
International Rectifier
MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms
AUIRF3808S.pdf12 Pages, 665 KB, Original
AUIRF3808S
International Rectifier
MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms
AUIRF3808STRL.pdf12 Pages, 665 KB, Original
AUIRF3808STRL
International Rectifier
MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms
AUIRF3808STRR.pdf12 Pages, 665 KB, Original
AUIRF3808STRR
International Rectifier
MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms
IRF3808.pdf10 Pages, 138 KB, Original

Product Details Search Results:

Infineon.com/AUIRF3808
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"140(A)","Mounting":"Through Hole","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"330(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1511 Bytes - 04:40:32, 29 November 2024
Infineon.com/AUIRF3808S
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"106(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1548 Bytes - 04:40:32, 29 November 2024
Infineon.com/AUIRF3808STRL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"106(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"75(V)","Packaging":"Tape and Reel","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1563 Bytes - 04:40:32, 29 November 2024
Infineon.com/IRF3808PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"140(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"330(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1542 Bytes - 04:40:32, 29 November 2024
Infineon.com/IRF3808SPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"200(W)","Continuous Drain Current":"106(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1530 Bytes - 04:40:32, 29 November 2024
Infineon.com/IRF3808STRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"106(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Tape and Reel","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1543 Bytes - 04:40:32, 29 November 2024
Infineon.com/IRF3808STRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"200(W)","Continuous Drain Current":"106(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"75(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1545 Bytes - 04:40:32, 29 November 2024
Irf.com/AUIRF3808
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-220AB PKG","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-220-3","Supplier Device Package":"TO-220AB","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF3808","Rds On (Max) @ Id, Vgs":"7 mOhm @ 82A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"330W","Standard Package":"5...
1679 Bytes - 04:40:32, 29 November 2024
Irf.com/AUIRF3808S
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF3808S","Rds On (Max) @ Id, Vgs":"7 mOhm @ 82A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max...
1721 Bytes - 04:40:32, 29 November 2024
Irf.com/AUIRF3808STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-263","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Supplier Device Package":"D2PAK","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF3808S","Rds On (Max) @ Id, Vgs":"7 mOhm @ 82A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)",...
1759 Bytes - 04:40:32, 29 November 2024
Irf.com/AUIRF3808STRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"430 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"106 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0070 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"550 A","Channel Type":"N-CHA...
1619 Bytes - 04:40:32, 29 November 2024
Irf.com/IRF3808LPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRF3808(S,L)PbF","Rds On (Max) @ Id, Vgs":"7 mOhm @ 82A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"5310pF @ ...
1505 Bytes - 04:40:32, 29 November 2024

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