Product Datasheet Search Results:
14 Pages, 331 KB, Original- AUIRF3710ZS
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK Tube
14 Pages, 331 KB, Original- AUIRF3710ZSTRL
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R
12 Pages, 385 KB, Original- IRF3710ZSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 59A 3-Pin(2+Tab) D2PAK Tube
13 Pages, 271 KB, Original- IRF3710ZSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R
14 Pages, 331 KB, Original- AUIRF3710ZS
- International Rectifier
- MOSFET N-CH 100V 59A D2PAK - AUIRF3710ZS
14 Pages, 331 KB, Original- AUIRF3710ZSTRL
- International Rectifier
- MOSFET N-CH 100V 59A D2PAK - AUIRF3710ZSTRL
14 Pages, 331 KB, Original- AUIRF3710ZSTRR
- International Rectifier
- MOSFET N-CH 100V 59A D2PAK - AUIRF3710ZSTRR
13 Pages, 279 KB, Original- IRF3710ZS
- International Rectifier
- IRF3710ZS
12 Pages, 385 KB, Original- IRF3710ZSPBF
- International Rectifier
- MOSFET N-CH 100V 59A D2PAK - IRF3710ZSPBF
13 Pages, 271 KB, Original- IRF3710ZSTRL
- International Rectifier
- 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3710ZS with Tape and Reel Left Packaging.
12 Pages, 385 KB, Original- IRF3710ZSTRLPBF
- International Rectifier
- MOSFET N-CH 100V 59A D2PAK - IRF3710ZSTRLPBF
12 Pages, 385 KB, Original- IRF3710ZSTRR
- International Rectifier
- 59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Infineon.com/AUIRF3710ZS
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"59(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"160(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1542 Bytes - 17:31:14, 01 December 2024
Infineon.com/AUIRF3710ZSTRL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"59(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"160(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1551 Bytes - 17:31:14, 01 December 2024
Infineon.com/IRF3710ZSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"59(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail/Tube","Power Dissipation":"160(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1528 Bytes - 17:31:14, 01 December 2024
Infineon.com/IRF3710ZSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"59(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"160(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1539 Bytes - 17:31:14, 01 December 2024
Irf.com/AUIRF3710ZS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"59A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"18 mOhm @ 35A, 10V","Datasheets":"AUIRF37...
1809 Bytes - 17:31:14, 01 December 2024
Irf.com/AUIRF3710ZSTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"59A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"18 mOhm @ 35A, 10V","Datasheets":"AUIRF37...
1847 Bytes - 17:31:14, 01 December 2024
Irf.com/AUIRF3710ZSTRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"59 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHANNE...
1577 Bytes - 17:31:14, 01 December 2024
Irf.com/IRF3710ZSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"59A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds O...
1985 Bytes - 17:31:14, 01 December 2024
Irf.com/IRF3710ZSTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"59A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds O...
2188 Bytes - 17:31:14, 01 December 2024
Irf.com/IRF3710ZSTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"59 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0180 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"240 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1548 Bytes - 17:31:14, 01 December 2024
Irf.com/IRF3710ZSTRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 11/Nov/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"18 mOhm @ 35A, 10V","Datasheets":"IRF3710Z(S,L)PbF","FET Type":"MOSF...
1962 Bytes - 17:31:14, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF3710ZS.pdf | 0.27 | 1 | Request |
