Product Datasheet Search Results:
13 Pages, 296 KB, Original- AUIRF2907ZS-7P
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 180A Automotive 7-Pin(6+Tab) D2PAK Tube
10 Pages, 297 KB, Original- IRF2907ZS-7PPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 180A 7-Pin(6+Tab) D2PAK Tube
12 Pages, 423 KB, Original- IRF2907ZSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK Tube
12 Pages, 423 KB, Original- IRF2907ZSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 75V 170A 3-Pin(2+Tab) D2PAK T/R
13 Pages, 296 KB, Original- AUIRF2907ZS-7P
- International Rectifier
- MOSFET N-CH 75V 180A D2PAK-7 - AUIRF2907ZS-7P
13 Pages, 296 KB, Original- AUIRF2907ZS7PTL
- International Rectifier
- MOSFET N-CH 75V 180A D2PAK-7 - AUIRF2907ZS7PTL
13 Pages, 296 KB, Original- AUIRF2907ZS7PTR
- International Rectifier
- MOSFET N-CH 75V 180A D2PAK-7 - AUIRF2907ZS7PTR
13 Pages, 372 KB, Original- IRF2907ZS
- International Rectifier
- IRF2907ZS
10 Pages, 297 KB, Original- IRF2907ZS-7PPBF
- International Rectifier
- MOSFET N-CH 75V 160A D2PAK7 - IRF2907ZS-7PPBF
12 Pages, 423 KB, Original- IRF2907ZSPBF
- International Rectifier
- MOSFET N-CH 75V 75A D2PAK - IRF2907ZSPBF
12 Pages, 423 KB, Original- IRF2907ZSTRL
- International Rectifier
- 160 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
10 Pages, 297 KB, Original- IRF2907ZSTRL7PP
- International Rectifier
- MOSFET N-CH 75V 160A D2PAK-7 - IRF2907ZSTRL7PP
Product Details Search Results:
Infineon.com/AUIRF2907ZS-7P
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"6 +Tab","Number of Elements":"1"}...
1556 Bytes - 02:37:25, 29 November 2024
Infineon.com/IRF2907ZS-7PPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"300(W)","Continuous Drain Current":"180(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"6 +Tab","Number of Elements":"1"}...
1549 Bytes - 02:37:25, 29 November 2024
Infineon.com/IRF2907ZSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1538 Bytes - 02:37:25, 29 November 2024
Infineon.com/IRF2907ZSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Tape and Reel","Power Dissipation":"300(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1544 Bytes - 02:37:25, 29 November 2024
Irf.com/AUIRF2907ZS-7P
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-7, D\u00b2Pak (6 Leads + Tab), TO-263CB","Current - Continuous Drain (Id) @ 25\u00b0C":"180A (Tc)","Gate Charge (Qg) @ Vgs":"260nC @ 10V","Product Photos":"D2PAK SOT427","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"3.8 mOhm @ 110A, 10V","Datasheets"...
1899 Bytes - 02:37:25, 29 November 2024
Irf.com/AUIRF2907ZS7PTL
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"410 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0038 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHA...
1624 Bytes - 02:37:25, 29 November 2024
Irf.com/AUIRF2907ZS7PTR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"410 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0038 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHA...
1624 Bytes - 02:37:25, 29 November 2024
Irf.com/IRF2907ZS
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"690 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"160 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0045 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"680 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1529 Bytes - 02:37:25, 29 November 2024
Irf.com/IRF2907ZS-7PPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-7, D\u00b2Pak (6 Leads + Tab), TO-263CB","Current - Continuous Drain (Id) @ 25\u00b0C":"160A (Tc)","Gate Charge (Qg) @ Vgs":"260nC @ 10V","Product Photos":"D2PAK SOT427","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"3.8 mOhm @ 110A, 10V","Datasheets":"IRF2...
2054 Bytes - 02:37:25, 29 November 2024
Irf.com/IRF2907ZSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"160A (Tc)","Gate Charge (Qg) @ Vgs":"270nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds ...
2134 Bytes - 02:37:25, 29 November 2024
Irf.com/IRF2907ZSTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"690 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"160 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0045 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"680 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1546 Bytes - 02:37:25, 29 November 2024
Irf.com/IRF2907ZSTRL7PP
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-7, D\u00b2Pak (6 Leads + Tab), TO-263CB","Current - Continuous Drain (Id) @ 25\u00b0C":"160A (Tc)","Gate Charge (Qg) @ Vgs":"260nC @ 10V","Product Photos":"D2PAK SOT427","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"3.8 mOhm @ 110A, 10V","Datasheets":"IRF2...
1905 Bytes - 02:37:25, 29 November 2024
Documentation and Support
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