Product Datasheet Search Results:

AUIRF1010EZ.pdf13 Pages, 754 KB, Original
AUIRF1010EZ
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(3+Tab) TO-220AB Tube
AUIRF1010EZS.pdf13 Pages, 754 KB, Original
AUIRF1010EZS
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK Tube
AUIRF1010EZSTRL.pdf13 Pages, 754 KB, Original
AUIRF1010EZSTRL
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R
IRF1010EPBF.pdf8 Pages, 244 KB, Original
IRF1010EPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube
IRF1010ESTRLPBF.pdf11 Pages, 129 KB, Original
IRF1010ESTRLPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R
IRF1010EZPBF.pdf12 Pages, 410 KB, Original
IRF1010EZPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube
IRF1010EZSPBF.pdf12 Pages, 410 KB, Original
IRF1010EZSPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK Tube
IRF1010EZSTRLP.pdf12 Pages, 401 KB, Original
IRF1010EZSTRLP
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R
AUIRF1010EZ.pdf15 Pages, 378 KB, Original
AUIRF1010EZ
International Rectifier
MOSFET N-CH 60V 75A TO220AB - AUIRF1010EZ
AUIRF1010EZL.pdf15 Pages, 378 KB, Original
AUIRF1010EZL
International Rectifier
75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF1010EZS.pdf15 Pages, 378 KB, Original
AUIRF1010EZS
International Rectifier
MOSFET N-CH 60V 75A D2PAK - AUIRF1010EZS
AUIRF1010EZSTRL.pdf15 Pages, 378 KB, Original
AUIRF1010EZSTRL
International Rectifier
MOSFET N-CH 60V 75A D2PAK - AUIRF1010EZSTRL

Product Details Search Results:

Infineon.com/AUIRF1010EZ
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"84(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1586 Bytes - 02:42:08, 29 November 2024
Infineon.com/AUIRF1010EZS
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"140(W)","Continuous Drain Current":"84(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1609 Bytes - 02:42:08, 29 November 2024
Infineon.com/AUIRF1010EZSTRL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"84(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1624 Bytes - 02:42:08, 29 November 2024
Infineon.com/IRF1010EPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"84(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1545 Bytes - 02:42:08, 29 November 2024
Infineon.com/IRF1010ESTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"84(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1523 Bytes - 02:42:08, 29 November 2024
Infineon.com/IRF1010EZPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"84(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1543 Bytes - 02:42:08, 29 November 2024
Infineon.com/IRF1010EZSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"140(W)","Continuous Drain Current":"84(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1532 Bytes - 02:42:08, 29 November 2024
Infineon.com/IRF1010EZSTRLP
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"84(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1552 Bytes - 02:42:08, 29 November 2024
Irf.com/AUIRF1010EZ
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"86nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"8.5 mOhm @ 51A, 10V","Datasheets":"AUIRF1010EZ(S,L)","FET Type":"MOSFET N-...
1777 Bytes - 02:42:08, 29 November 2024
Irf.com/AUIRF1010EZL
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0085 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"340 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V"...
1499 Bytes - 02:42:08, 29 November 2024
Irf.com/AUIRF1010EZS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"86nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"8.5 mOhm @ 51A, 10V","Datasheets":"AUIRF10...
1822 Bytes - 02:42:08, 29 November 2024
Irf.com/AUIRF1010EZSTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"86nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"8.5 mOhm @ 51A, 10V","Datasheets":"AUIRF10...
1860 Bytes - 02:42:08, 29 November 2024

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