Product Datasheet Search Results:
12 Pages, 934 KB, Original- IPI086N10N3G
- Infineon Technologies
- IPI086N10N3G
12 Pages, 781 KB, Original- IPI086N10N3GXKSA1
- Infineon Technologies
- Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262
Product Details Search Results:
Infineon.com/IPI086N10N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"80 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0086 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"320 A","Channel Type":"N-CHANNEL",...
1559 Bytes - 15:11:19, 01 December 2024
Infineon.com/IPI086N10N3GXKSA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"80(A)","Mounting":"Through Hole","Drain-Source On-Volt":"100(V)","Pin Count":"3 +Tab","Packaging":"Rail/Tube","Power Dissipation":"125(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-262","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.0086(ohm)","Number of Elements":"1"}...
1571 Bytes - 15:11:19, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPI086N10N3G.pdf | 0.91 | 1 | Request |
