Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"17 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0780 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"52 A","Channel Type":"N-CHANNEL","China Ro...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 12\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"13A (Tc)","Gate Charge (Qg) @ Vgs":"11nC @ 10V","Product Photos":"TO252-3","Rds On (Max) @ Id, Vgs":"78 mOhm @ 13A, 10V","Datasheets":"IPx7xCN10N G, IPx80CN10N G","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/201...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"13(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Pin Count":"2 +Tab","Packaging":"Tape and Reel","Power Dissipation":"31(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.078(ohm)","Number of Elements":"1"}...