Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"47 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0330 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","China R...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 29\u00b5A","Input Capacitance (Ciss) @ Vds":"1570pF @ 50V","Series":"OptiMOS\u2122","Standard Package":"2,500","Supplier Device Package":"PG-TO252-3","Datasheets":"IPx3xCN10N G","Rds On (Max) @ Id, Vgs":"33 mOhm @ 27A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"58W","Package / Case":"TO-252-3, DPak (2 Leads + ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"27(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Drain-Source On-Res":"0.033(ohm)","Packaging":"Tape and Reel","Power Dissipation":"58(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"47 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"27 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0330 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"108 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMI...