Product Datasheet Search Results:
12 Pages, 1234 KB, Original- IPD105N03LG
- Infineon Technologies
- IPD105N03LG
13 Pages, 1229 KB, Original- IPD105N03LGATMA1
- Infineon Technologies
- MOSFET N-Ch 30V 35A DPAK-2
Product Details Search Results:
Infineon.com/IPD105N03LG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"38 W","Avalanche Energy Rating (Eas)":"30 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"35 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0105 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"245...
1665 Bytes - 15:10:34, 01 December 2024
Infineon.com/IPD105N03LGATMA1
{"Factory Pack Quantity":"2500","Vds - Drain-Source Breakdown Voltage":"30 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"2.2 V","Qg - Gate Charge":"14 nC","Package / Case":"DPAK-3","Part # Aliases":"SP000796910","Fall Time":"2.4 ns","Packaging":"Reel","Product Category":"MOSFET","Brand":"Infineon Technologies","Tradename":"OptiMOS","Maximum Operating Temperature":"+ 175 C","Manufacturer":"Infineon","Forward Transconductance - Min":"51 S","Id - Continuous Drain Current":"35 A...
1911 Bytes - 15:10:34, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPD105N03LG.pdf | 1.20 | 1 | Request |
