Product Datasheet Search Results:

IPD075N03LG.pdf12 Pages, 1179 KB, Original
IPD075N03LGATMA1.pdf13 Pages, 1188 KB, Original

Product Details Search Results:

Infineon.com/IPD075N03LG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"47 W","Avalanche Energy Rating (Eas)":"50 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0114 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"350...
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Infineon.com/IPD075N03LGATMA1
{"Factory Pack Quantity":"2500","Vds - Drain-Source Breakdown Voltage":"30 V","Transistor Polarity":"N-Channel","Qg - Gate Charge":"18 nC","Package / Case":"DPAK-3","Part # Aliases":"SP000680634","Fall Time":"2.8 ns","Mounting Style":"SMD/SMT","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Tradename":"OptiMOS","Configuration":"Single","Maximum Operating Temperature":"+ 175 C","Manufacturer":"Infineon","Forward Transconductance - Min":"61 S","Id - Co...
1812 Bytes - 15:16:28, 01 December 2024
Infineon.com/IPD075N03LGBTMA1
1028 Bytes - 15:16:28, 01 December 2024

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