Product Datasheet Search Results:

IPD060N03LG.pdf12 Pages, 1011 KB, Original
IPD060N03LGATMA1.pdf13 Pages, 523 KB, Original
IPD060N03LGBTMA1.pdf12 Pages, 521 KB, Original
IPD060N03LGBTMA1
Infineon Technologies
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252

Product Details Search Results:

Infineon.com/IPD060N03LG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"56 W","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0090 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"350...
1657 Bytes - 15:00:48, 01 December 2024
Infineon.com/IPD060N03LGATMA1
{"Factory Pack Quantity":"2500","Vds - Drain-Source Breakdown Voltage":"30 V","Transistor Polarity":"N-Channel","Tradename":"OptiMOS","Series":"IPD060N03","Brand":"Infineon Technologies","Id - Continuous Drain Current":"50 A","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"6 mOhms","Package / Case":"TO-252-3","Part # Aliases":"SP000680632","RoHS":"Details","Manufacturer":"Infineon"}...
1485 Bytes - 15:00:48, 01 December 2024
Infineon.com/IPD060N03LGBTMA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Rise Time":"3 ns","Typical Turn-Off Delay Time":"20 ns","Description":"Value","Maximum Continuous Drain Current":"50 A","Package":"3TO-252","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"5 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"6@10V mOhm","Manufacturer":"Infineon Technologies"}...
1475 Bytes - 15:00:48, 01 December 2024

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