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IPB048N06LG.pdf10 Pages, 738 KB, Original

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Infineon.com/IPB048N06LG
{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Rise Time":"25 ns","Typical Turn-Off Delay Time":"98 ns","Description":"Value","Maximum Continuous Drain Current":"100 A","Package":"3TO-263","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"18 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"4.4@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"24 ns"}...
1468 Bytes - 15:29:19, 01 December 2024

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