Product Datasheet Search Results:
- IPB027N10N3G
- Infineon Technologies
- IPB027N10N3G
- IPB027N10N3GATMA1
- Infineon Technologies
- MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
- IPB027N10N3GXT
- Infineon Technologies Ag
- 120 A, 100 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Infineon.com/IPB027N10N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0027 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"N-CHANNEL","...
1613 Bytes - 22:41:32, 28 November 2024
Infineon.com/IPB027N10N3GATMA1
{"Product Category":"MOSFET","Series":"XPB027N10","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1200 Bytes - 22:41:32, 28 November 2024
Infineon.com/IPB027N10N3GXT
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0027 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V"...
1549 Bytes - 22:41:32, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IPB027N10N3G.pdf | 0.52 | 1 | Request |