Product Datasheet Search Results:

IPB027N10N3G.pdf9 Pages, 534 KB, Original
IPB027N10N3GATMA1.pdf10 Pages, 530 KB, Original
IPB027N10N3GATMA1
Infineon Technologies
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
IPB027N10N3GXT.pdf9 Pages, 530 KB, Original
IPB027N10N3GXT
Infineon Technologies Ag
120 A, 100 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

Product Details Search Results:

Infineon.com/IPB027N10N3G
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0027 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"N-CHANNEL","...
1613 Bytes - 22:41:32, 28 November 2024
Infineon.com/IPB027N10N3GATMA1
{"Product Category":"MOSFET","Series":"XPB027N10","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1200 Bytes - 22:41:32, 28 November 2024
Infineon.com/IPB027N10N3GXT
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0027 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V"...
1549 Bytes - 22:41:32, 28 November 2024

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