Product Datasheet Search Results:
- IPB025N08N3G
- Infineon Technologies
- IPB025N08N3G
- IPB025N08N3GATMA1
- Infineon Technologies
- Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263
- IPB025N08N3GXT
- Infineon Technologies Ag
- Trans MOSFET N-CH 80V 120A 3-Pin (2+Tab) TO-263 T/R
Product Details Search Results:
Infineon.com/IPB025N08N3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1430 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0025 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"N-CHANNEL","FET ...
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Infineon.com/IPB025N08N3GATMA1
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"120(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"80(V)","Drain-Source On-Res":"0.0025(ohm)","Packaging":"Tape and Reel","Power Dissipation":"300(W)","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1668 Bytes - 15:14:52, 01 December 2024
Infineon.com/IPB025N08N3GXT
1106 Bytes - 15:14:52, 01 December 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
IPB025N08N3G.pdf | 0.54 | 1 | Request |