Product Datasheet Search Results:
9 Pages, 497 KB, Original- IPB009N03LG
- Infineon Technologies
- IPB009N03LG
10 Pages, 422 KB, Original- IPB009N03LGATMA1
- Infineon Technologies
- MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
11 Pages, 1048 KB, Original- IPB009N03LG=LE1
- Infineon Technologies
- Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263
Product Details Search Results:
Infineon.com/IPB009N03LG
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"610 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"180 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0013 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1260 A","Channel Type":"N-CHANNEL","FET ...
1601 Bytes - 21:49:38, 28 November 2024
Infineon.com/IPB009N03LGATMA1
{"Product Category":"MOSFET","Series":"XPB009N03","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1115 Bytes - 21:49:38, 28 November 2024
Infineon.com/IPB009N03LG=LE1
{"Category":"MOSFET","Maximum Drain Source Voltage":"30 V","Typical Rise Time":"14 ns","Typical Turn-Off Delay Time":"103 ns","Description":"Value","Maximum Continuous Drain Current":"180 A","Package":"7TO-263","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"26 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"0.95@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"22 ns"}...
1455 Bytes - 21:49:38, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPB009N03LG.pdf | 0.48 | 1 | Request |
