H5MS1222EFP-J3E 4M X 32 DDR DRAM, PBGA90
From SK Hynix
| Status | ACTIVE |
| Access Mode | FOUR BANK PAGE BURST |
| Memory Density | 1.34E8 deg |
| Memory IC Type | DDR DRAM |
| Memory Width | 32 |
| Mfr Package Description | 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 90 |
| Number of Words | 4.19E6 words |
| Number of Words Code | 4M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -25 Cel |
| Organization | 4M X 32 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Supply Voltage-Max (Vsup) | 1.95 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Form | BALL |
| Terminal Pitch | 0.8000 mm |
| Terminal Position | BOTTOM |
