2SK412 N-Channel Enhancement MOSFET - IDR(Diode) 10A
From Hitachi Semiconductor
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 5.0 |
| @V(DS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 100 |
| C(iss) Max. (F) | 1.4n |
| I(D) Abs. Drain Current (A) | 10 |
| I(DSS) Min. (A) | 1.0m |
| I(GSS) Max. (A) | 1.0u |
| Military | N |
| Package | TO-247var |
| V(BR)DSS (V) | 250 |
| V(BR)GSS (V) | 20 |
| g(fs) Max, (S) Trans. conduct, | 2.5 |
| g(fs) Min. (S) Trans. conduct. | 1.6 |
| r(DS)on Max. (Ohms) | 0.4 |
| t(f) Max. (s) Fall time. | 60n |
| t(r) Max. (s) Rise time | 52n |
