2SK176H N-Channel Enhancement MOSFET
From Hitachi Semiconductor
| @(VDS) (V) (Test Condition) | 10 |
| @Freq. (Hz) (Test Condition) | 1M |
| @I(D) (A) (Test Condition) | 3.0 |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 10 |
| @V(GS) (V) (Test Condition) | 15 |
| Absolute Max. Power Diss. (W) | 125 |
| C(iss) Max. (F) | 700p |
| I(D) Abs. Drain Current (A) | 8 |
| I(DSS) Max. (A) | 3.0m |
| Military | N |
| Package | TO-3 |
| V(BR)DSS (V) | 200 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 3.0 |
| V(GS)th Min. (V) | 0.55 |
| g(fs) Max, (S) Trans. conduct, | 1.4 |
| g(fs) Min. (S) Trans. conduct. | 0.7 |
| r(DS)on Max. (Ohms) | 1.5 |
