2SC648H Si NPN Lo-Pwr BJT
From Hitachi Semiconductor
| Status | Discontinued |
| @I(C) (A) (Test Condition) | .10m |
| @V(CE) (V) (Test Condition) | 6.0 |
| Absolute Max. Power Diss. (W) | 100m |
| I(C) Abs.(A) Collector Current | 30m |
| I(CBO) Max. (A) | 100u |
| Military | N |
| Package | TO-1 |
| V(BR)CBO (V) | 30 |
| V(BR)CEO (V) | 25 |
| h(FE) Min. Static Current Gain | 160 |
