HY51V4403BLT80
General Purpose Dynamic RAM - Read-Modify-Write Capability

From Hyundai Semiconductor

Bits Per Word4
MilitaryN
Nom. Supp (V)3.3
Number of Words1M
Output Config3-State
P(D) Max.(W) Power Dissipation900m
PackageTSOP-24/26
Pins26
TechnologyCMOS
t(acc) Max. (S)80n
tW Min (S)150n

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