HUF76132S3
N-Channel Enhancement MOSFET

From Harris Semiconductor

StatusDiscontinued
@(VDS) (V) (Test Condition)16
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)48
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)4.5
Absolute Max. Power Diss. (W)145
C(iss) Max. (F)1.65n
I(D) Abs. Drain Current (A)75
I(D) Abs. Max.(A) Drain Curr.51
I(DSS) Max. (A)1.0u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-262AA
Thermal Resistance Junc-Amb.62
V(BR)DSS (V)30
V(BR)GSS (V)16
V(GS)th Max. (V)3.0
V(GS)th Min. (V)1.0
r(DS)on Max. (Ohms).018
t(d)off Max. (s) Off time33n
t(f) Max. (s) Fall time.42n
t(r) Max. (s) Rise time105n
td(on) Max (s) On time delay17n

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