HGTP12N60C3DR N-Channel IGBT
From Harris Semiconductor
| @I(C) (A) (Test Condition) | 12 |
| @V(GE) (Test Condition) | 15 |
| Absolute Max. Power Diss. (W) | 104 |
| I(C) Abs.(A) Collector Current | 24 |
| I(CES) Max. (A) | 250u |
| I(GES) Max. (A) | 100n |
| Package | TO-220AB |
| V(BR)CES (V) | 600 |
| V(BR)GES (V) | 20 |
| V(CE)sat Max.(V) | 2.2 |
| V(GE)th Max. (V) | 7.5 |
| t(d)off Max. (s) Off time | 500n |
| t(f) Max. (s) Fall time. | 400n |
| t(r) Max. (s) Rise time | 38n |
| td(on) Max (s) On time delay | 36n |
