FRK460H4
N-Channel Enhancement MOSFET - Radiation-Hardened at 1M RADs(Si).

From Harris Semiconductor

StatusDiscontinued
@(VDS) (V) (Test Condition)20
Absolute Max. Power Diss. (W)150
I(D) Abs. Drain Current (A)17
MilitaryN
PackageTO-204AE
V(BR)DSS (V)500
V(BR)GSS (V)20
r(DS)on Max. (Ohms)0.40

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