2N7311H4 P-Channel Enhancement MOSFET - Radiation Hardened to 1M RADs (Si)
From Harris Semiconductor
| Status | Discontinued |
| @I(D) (A) (Test Condition) | 2 |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 200 |
| @V(GS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 25 |
| I(D) Abs. Drain Current (A) | 3 |
| I(D) Abs. Max.(A) Drain Curr. | 2 |
| I(DM) Max (A)(@25°C) | 9 |
| I(DSS) Max. (A) | 1m |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-205AF |
| Thermal Resistance Junc-Amb. | 175 |
| V(BR)DSS (V) | 200 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 4.0 |
| V(GS)th Min. (V) | 2.0 |
| r(DS)on Max. (Ohms) | 1.30 |
| t(d)off Max. (s) Off time | 48n |
| t(f) Max. (s) Fall time. | 54n |
| t(r) Max. (s) Rise time | 76n |
| td(on) Max (s) On time delay | 58n |
