S4114-35Q
PHOTO DIODE

From Hamamatsu Photonics K.K.

StatusACTIVE
ConfigurationCOMPLEX
Dark Current-Max0.3000 nA
Infrared RangeYes
Mfr Package DescriptionCERAMIC, DIP-40
Number of Functions1
Operating Temperature-Max60 Cel
Operating Temperature-Min-20 Cel
Optoelectronic Device TypePHOTO DIODE
Pk Sensitivity Wavelength-Nom800 nm
Reverse Breakdown Voltage-Min15 V
ShapeRECTANGULAR
Size34.9 mm

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