S2386-8KK Infrared-Optimized Photodiode
From Hamamatsu Corporation
| @V(R) (V) (Test Condition) | 10m |
| @Wavelength(m)(Test Condition) | 900n |
| C(T) Max. (F) Capacitance | 3.2n |
| I(sc)out (A)Short-circuit Cur. | 26u |
| Ioff Max.(A) Off-state Current | 50p |
| NEP Max.(W/(Hz)1/2) | 2.0f |
| Package | TO-5 |
| Photosensitive Area (mm2) | 33.6 |
| Re Min.(A/W) Responsivity | 0.6 |
| Semiconductor Material | Silicon |
| Spectral Response High (m) | 1.1u |
| Spectral Response Low (m) | 400n |
| V(R) Max.(V) Reverse Voltage | 30 |
| t(resp) Max.(s) Response Time | 7.0u |
