Product Datasheet Search Results:

HAT2179R-EL-E.pdf4 Pages, 86 KB, Original
HAT2179R-EL-E
Renesas Technology / Hitachi Semiconductor
Silicon N Channel MOS FET High Speed Power Switching
HAT2179R-EL-E.pdf9 Pages, 121 KB, Original
HAT2179R-EL-E
Renesas Electronics
0.7 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Renesas.com/HAT2179R-EL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.7000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1522 Bytes - 09:49:13, 28 November 2024

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