Product Datasheet Search Results:
4 Pages, 85 KB, Original- HAT1065T-EL-E
- Renesas Technology / Hitachi Semiconductor
- Silicon P Channel MOS FET High Speed Power Switching
6 Pages, 110 KB, Original- HAT1065T-EL-E
- Renesas Electronics
- 0.25 A, 200 V, 10 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/HAT1065T-EL-E
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","EU RoHS Compliant":"Yes","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"1 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OX...
1533 Bytes - 18:13:36, 27 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SHAT13.pdf | 0.04 | 1 | Request |
