XGSA1030
Si NPN Power BJT

From General Semiconductor Industries, Inc.

StatusDiscontinued
@I(C) (A) (Test Condition)1.0
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)7.5
I(C) Abs.(A) Collector Current2.0
I(CBO) Max. (A)10u
MilitaryN
PackageTO-5
V(BR)CBO (V)350
V(BR)CEO (V)300
f(T) Min. (Hz) Transition Freq30M
h(FE) Min. Static Current Gain10
t(d) Max. (s) Delay time.40n
t(f) Max. (s) Fall time.300n
t(r) Max. (s) Rise time200n
t(s) Max. (s) Storage time.1.5u

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