GA10JT12-263 TRANS SJT 1.2KV 10A
From GeneSiC Semiconductor
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Datasheets | GA10JT12-263 |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
FET Feature | Super Junction |
FET Type | Silicon Carbide, Normally Off |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | - |
Input Capacitance (Ciss) @ Vds | 1403pF @ 800V |
Mounting Type | Surface Mount |
Online Catalog | Silicon Carbide (SiC) Super Junction FETs |
Other Names | 1242-1186 GA10JT12-220ISO GA10JT12220ISO |
Package / Case | - |
Packaging | Tube |
Power - Max | 170W |
Product Photos | TO263-3 |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 10A |
Series | - |
Standard Package | 50 |
Supplier Device Package | - |
Vgs(th) (Max) @ Id | - |